Design & Reuse
2715 IP
351
1.0
3K128 MTP
XRX013HVPLFLASH_3K128 is a HV compatible embedded non-volatile memory IP with 3K128 ROM density. This IP could be used for code storage, firmware upd...
352
1.0
16K16 MTP
XRX015LGCLFLASH_16K16 is a logic compatible embedded non-volatile memory IP with 16K16 ROM density. This IP could be used for code storage, firmware ...
353
1.0
8K16 MTP
XRX018LGCLFLASH_8K16 is a logic compatible embedded non-volatile memory IP with 8K16 ROM density. This IP could be used for code storage, firmware up...
354
1.0
16K8 MTP
XRF018BCDLFLASH_16K8 is a BCD compatible embedded non-volatile memory IP with 16K8 ROM density. This IP could be used for code storage, firmware upda...
355
0.0
PAD - HHGrace 110nm ULL
...
356
1.0
MCU PAD - SMIC 55nm Eflash
...
357
1.0
MCU PAD - SMIC 55nm Eflash
...
358
0.3729
Dolphin Temperature Sensor
Thermal sensor IP consists of an analog hardmacro block and a digital Soft-IP wrapper. The soft IP sweeps a digital code to the analog block, which in...
359
1.0
PAD - SMIC 110nm generic
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360
1.0
MCU PAD - SMIC 55nm Eflash
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361
1.0
32K8 MTP
XRF018BCDMTP_32K8 is a BCD compatible embedded non-volatile memory IP with 32K8 ROM density. This IP could be used for code storage, firmware update,...
362
1.0
8K32 MTP
XRF018BCDMTP_8K32 is a BCD compatible embedded non-volatile memory IP with 8K32 ROM density. This IP could be used for code storage, firmware update,...
363
1.0
4K16 MTP
XRS011LGCMTP_4K16 is a logic compatible embedded non-volatile memory IP with 4K16 ROM density. This IP could be used for code storage, firmware updat...
364
1.0
8K8 MTP
XRS011LGCMTP_8K8 is a logic compatible embedded non-volatile memory IP with 8K8 ROM density. This IP could be used for code storage, firmware update,...
365
1.0
16K32 MTP
XRS011LGCMTP_16K32 is a logic compatible embedded non-volatile memory IP with 16K32 ROM density. This IP could be used for code storage, firmware upd...
366
1.0
8K16 MTP
XRX018ULLMTP_8K16 is a logic compatible embedded non-volatile memory IP with 8K16 ROM density. This IP could be used for code storage, firmware updat...
367
1.0
16K8 MTP
XRX018BCDMTP_16K8B is a BCD compatible embedded non-volatile memory IP with 16k8 ROM density. This IP could be used for code storage, firmware update...
368
1.0
8K8 MTP
XRX018BCDMTP_8K8A is a BCD compatible embedded non-volatile memory IP with 8k8 ROM density. This IP could be used for code storage, firmware update, ...
369
0.3729
Ultra High Density and Ultra Low Power 7-track Standard cell library - TSMC 65nm LP / GP / ULP, supports 60/65/70nm channel length
Dolphin offers an extensive array of Standard Cell libraries that have been methodically tested and verified in silicon for each process technology su...
370
1.0
16K8 MTP
XRX018BCDMTP_16K8A is a BCD compatible embedded non-volatile memory IP with 16k8 ROM density. This IP could be used for code storage, firmware update...
371
1.0
4K8 MTP
XRS018BCDMTP_4K8 is a BCD compatible embedded non-volatile memory IP with 4k8 ROM density. This IP could be used for code storage, firmware update, p...
372
1.0
128x8 MTP
XRS018BCDMTP_128x8 is a BCD compatible embedded non-volatile memory IP with 128x8 ROM density. This IP could be used for code storage, firmware updat...
373
1.0
16X8 MTP
XRS018BCDMTP_16X8 is a BCD compatible embedded non-volatile memory IP with 16X8 ROM density. This IP could be used for code storage, firmware update,...
374
1.0
64X16 MTP
XRS018BCDMTP_64X16 is a BCD compatible embedded non-volatile memory IP with 64X16 ROM density. This IP could be used for code storage, firmware updat...
375
1.0
512X1 MTP
XRO018BICMTP_512X1A is a BCD compatible embedded non-volatile memory IP with 64X16 ROM density. This IP could be used for code storage, firmware upda...
376
0.0
Library of LVDS Ios cells in SMIC 130nm~28nm
This IP is a total solution for LVDS applications, including LVDS transmitter I/O, receiver I/O, common block and power/ground I/O. LVDS transmitter a...
377
0.0
Library of LVDS Ios cells in HHGrace 130nm~55nm
This IP is a total solution for LVDS applications, including LVDS transmitter I/O, receiver I/O, common block and power/ground I/O. LVDS transmitter a...
378
0.0
Library of LVDS Ios cells in HLMC 28nm
This IP is a total solution for LVDS applications, including LVDS transmitter I/O, receiver I/O, common block and power/ground I/O. LVDS transmitter a...
379
0.0
Library of LVDS Ios cells in TSMC 180nm~22nm
This IP is a total solution for LVDS applications, including LVDS transmitter I/O, receiver I/O, common block and power/ground I/O. LVDS transmitter a...
380
0.3729
High Performance and High Density 10-track Standard cell library - TSMC 65nm LP / GP / ULP, supports 60/65/70nm channel length
Dolphin offers an extensive array of Standard Cell libraries that have been methodically tested and verified in silicon for each process technology su...
381
0.0
LogicEE® Embedded EEPROM in SMIC 180nm~55nm
LogicEE® EEPROM IP是替代外部EEPROM的IP解决方案,可在逻辑工艺上实现,而无需增加额外的光罩层次。最大支持2K字节(Byte)存储容量,并可实现位操作,同时提供高达10万次的写入及擦除次数。...
382
0.0
LogicEE® Embedded EEPROM in CSMC 180nm~110nm
LogicEE® EEPROM IP是替代外部EEPROM的IP解决方案,可在逻辑工艺上实现,而无需增加额外的光罩层次。最大支持2K字节(Byte)存储容量,并可实现位操作,同时提供高达10万次的写入及擦除次数。...
383
0.0
LogicFlash® Embedded MTP in SMIC 180nm~55nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术,基于逻辑工艺实现,无需增加额外光罩层次,或通过增加1层额外光罩,缩减IP面积,适合于1KB~64KB的中等容量应用,同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
384
0.0
LogicFlash® Embedded MTP in Tower 180nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术,基于逻辑工艺实现,无需增加额外光罩层次,或通过增加1层额外光罩,缩减IP面积,适合于1KB~64KB的中等容量应用,同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
385
0.0
LogicFlash® Embedded MTP in CSMC 180nm~110nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术,基于逻辑工艺实现,无需增加额外光罩层次,或通过增加1层额外光罩,缩减IP面积,适合于1KB~64KB的中等容量应用,同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
386
0.0
LogicFlash® Embedded MTP in GlobalFoundries 180nm~110nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术,基于逻辑工艺实现,无需增加额外光罩层次,或通过增加1层额外光罩,缩减IP面积,适合于1KB~64KB的中等容量应用,同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
387
0.0
LogicFlash® Embedded MTP in HHGrace 180nm~55nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术,基于逻辑工艺实现,无需增加额外光罩层次,或通过增加1层额外光罩,缩减IP面积,适合于1KB~64KB的中等容量应用,同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
388
0.0
LogicFlash® Embedded MTP in UMC 180nm~110nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术,基于逻辑工艺实现,无需增加额外光罩层次,或通过增加1层额外光罩,缩减IP面积,适合于1KB~64KB的中等容量应用,同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
389
0.0
LogicFlash® Embedded MTP in Silterra 180nm~110nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术,基于逻辑工艺实现,无需增加额外光罩层次,或通过增加1层额外光罩,缩减IP面积,适合于1KB~64KB的中等容量应用,同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
390
0.0
LogicFlash® Embedded MTP in TSMC 180nm~130nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术,基于逻辑工艺实现,无需增加额外光罩层次,或通过增加1层额外光罩,缩减IP面积,适合于1KB~64KB的中等容量应用,同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
391
0.3729
Thick oxide library - TSMC 65nm 65LP LP / GP / ULP
Dolphin offers an extensive array of Standard Cell libraries that have been methodically tested and verified in silicon for each process technology su...
392
0.0
LogicFlash® Embedded MTP in Nexchip 150nm~55nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术,基于逻辑工艺实现,无需增加额外光罩层次,或通过增加1层额外光罩,缩减IP面积,适合于1KB~64KB的中等容量应用,同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
393
0.0
LogicFlash Pro® Embedded Flash memory IP
LogicFlash Pro® eFlash是拥有自主知识产权的嵌入式闪存技术,可实现高性能、高可靠性的大容量存储。 产品开发验证中。...
394
0.0
Low Power MCU I/O
This I/O library can easily support digital core voltage power off, and voltage transformation between different voltage domains. The common GPIOs con...
395
5.0
Fully-integrated Low Voltage Differential Signaling (LDVS) transceiver
The LVDS Transceiver is a fully integrated Low-Voltage Differential Signaling (LVDS) Analog Front End (AFE) including one flow-through driver and two ...
396
100.0
The SST SuperFlash® IP is an embedded CMOS Flash memory IP with sector/chip Erase and byte Program capability.
SuperFlash® is SST’s patented and proprietary NOR flash technology. With 80B+ devices shipped, SuperFlash is the non-volatile memory of choice for emb...
397
0.0
Library of LVDS IOs cells for TSMC 40G
The nSIO2000_TS40G_2V5_0V9 library is an IO cells library combining various LVDS and general purpose I/O powered at 2.5V/0.9V or 1.8V/0.9V, designed o...
398
0.0
TSMC 40G 2Gb/s RX LVDS IO cell
The LSR25R/Z cell is a high-speed and low-power LVDS receiver IO cell powered at 2.5V/0.9V or 1.8V/0.9V, designed on the TSMC 40 G technology....
399
0.0
TSMC 40G 2Gb/s TX LVDS IO cell
The LST25R/Z cell is a high-speed and low-power LVDS transmitter IO cell powered at 2.5V/0.9V or 1.8V/0.9V, designed on the TSMC 40 G technology....
400
0.0
TSMC 40G 2Gb/s bidirectional LVDS IO cell
The LSB25R/Z cell is a high-speed and low-power LVDS bidirectional transceiver IO cell powered at 2.5V/0.9V or 1.8V/0.9V, designed on the TSMC 40 G te...