SAN JOSE, Calif. , Nov. 29, 2017 – Toshiba Memory America, Inc.
(TMA)*,
the world leader in memory solutions, has begun sampling Universal Flash
Storage (UFS) devices utilizing its cutting-edge 64-layer
BiCS FLASH™ 3D flash memory. The new UFS devices meet
performance demands for applications that require high-speed read/write
performance and low power consumption, including mobile devices such as
smartphones and tablets and augmented /virtual reality systems.
All four devices are compliant with JEDEC UFS Ver. 2.1, including
HS-GEAR3, which has a theoretical interface speed of up to 5.8Gbps per
lane (x2 lanes=11.6Gbps) while also suppressing any increase in power
consumption. Sequential read and write performanceof the
64GB device are 900MB/sec and 180MB/sec, while the random read and write
performance are approximately 200 percent and 185 percent better,
respectively, than those of previous generation devices.
Due to its serial interface, UFS supports full duplexing, which enables
both concurrent reading and writing between the host processor and UFS
device.
Toshiba was the first company in the world to announce 3D flash memory technology, and the addition of 3D-based UFS keeps the company at the forefront of innovation while simultaneously enhancing its existing lineup of BiCS FLASH solutions.
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