Dec. 11, 2017 –
The wafer enables increased performance in the near-infrared spectrum including 3D image sensors such as those used in the latest smartphones for augmented and virtual reality applications and facial recognition.
The Imager-SOI provides enhanced quantum efficiency by trapping light above the buried oxide (BOX) layer and reduces cross-talk between pixels. The BOX also limits the impact of substrate noise and metal contamination, and acts as a diffusion barrier to prevent metal contaminants migrating into pixels.
The net result is an improved signal-to-noise ratio in the NIR spectrum, the company claimed. Wafers are available at 300mm diameter.
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