Feb. 21, 2018 – ully depleted silicon-on-insulator (FD-SOI) is gaining ground across a number of new markets, ranging from IoT to automotive to machine learning, and diverging sharply from its original position as a less costly alternative to finFET-based designs.
For years, FD-SOI has been viewed as an either/or solution targeted at the same markets as bulk CMOS. Among the differences:
- FD-SOI transistors are planar, so they are simpler and less expensive to design and manufacture than 3D finFETs. Manufacturing requires only minimal double patterning at 22nm and beyond, whereas 10/7nm finFETs require multiple patterning on multiple layers, as well as complex power management schemes to deal with dynamic power density and leakage current, which is a growing problem at 10/7nm and beyond.
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