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2776 IP
2651
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Single Port SRAM compiler - Memory optimized for ultra low power and high density - Dual Voltage - compiler range up to 512 k
Foundry Sponsored - Single Port SRAM compiler - TSMC 180 nm eLL - Memory optimized for ultra low power and high density - Dual Voltage - compiler rang...
2652
0.0
Single Port SRAM with low power retention mode, high speed pins on 1 side
Low Leakage. Mobile Semiconductor's Bulk 22 ULL SRAM memory compiler generates memory instances using the Bulk 22ULL process. Each ultra-low leakage m...
2653
0.0
Single Port, High Speed, Multi Bank SRAM Memory Compiler
Low Leakage. Mobile Semiconductor's SP-HSB-GF22FDX-PLUS memory compiler generates high speed memories by splitting memory into 1 to 4 banks for reduc...
2654
0.0
MIPI D-PHY/LVDS Combo DSI RX (Receiver) in TSMC 110G
The MXL-DPHY-LVDS-DSI-RX-T-110G is a high-frequency, low-power, low-cost, source-synchronous, Physical Layer compliant with the MIPI Alliance Standard...
2655
0.0
1Kbyte EEPROM (NTLab)
The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1Kbyte (16(bit per word) x 8(words per page) x 64(...
2656
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2KByte EEPROM in SMIC 130EF
...
2657
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1KByte EEPROM IP with configuration 66p16w8bit
130GF_EEPROM_04 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1056 Byte (8(bit per word) x 16(words per pa...
2658
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1Kbyte EEPROM with configuration 64p8w16bit
180SMIC_EEPROM_08 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1 Kbyte (16(bit per word) x 8(words per p...
2659
0.0
8Kx16 Bits OTP (One-Time Programmable) IP, D- HiTe- AN180 1.8V / 5V Process
The ATO008KX16DB180AO15NA is organized as 8Kx16 One-Time Programmable in 16-bit read and 1-bit program modes. This is a kind of non-volatile memory su...
2660
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8Kx16 Bits OTP (One-Time Programmable) IP, VI- 110nm E-Flash 1.5V/3.3V Process
The ATO008KX16VI110EFM5DA I-fuse® IP is organized as 8Kx16 bits one-time programmable (OTP). This is a kind of non-volatile memory fabricated in VI- 1...
2661
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1Kx32 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process
The AT1K32T40ULP6AA is organized as a 1K-bit by 32 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in TSM- 40ULP 1.1/2.5...
2662
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8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process
The ATO0008KX8MX180LBX4DA is organized as an 8K-bits by 8 one-time programmable memory. This is a kind of non-volatile memory fabricated in MXI- 0.1...
2663
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8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process
The ATO0008KX8MX180LBX4DC is organized as a 8k x 8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in MXIC 0....
2664
0.0
8Kx8 Bits OTP (One-Time Programmable) IP, MXI- 0.18μm 1.8V/5V Logic/BCD Process
The ATO0008KX8MX180LBX4DO is organized as a 8k x 8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in MXIC 0....
2665
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4kx8 Bits OTP (One-Time Programmable) IP, Ne-chi- LCDDr 55nm 1.2V/6V Process
The ATO0004KX8NX055LCD4NA is organized as 4K x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Nexchip LCDDr 55nm ...
2666
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4Kx8 Bits OTP (One-Time Programmable) IP, TSM- 0.18µm 1.8V/5V Mixed-Signal Process
The ATO0004KX8TS180MSS3NA is organized as a 4Kx8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in TSM- 0.18...
2667
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1Kx8 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process
The ATO0001KX8TS040ULP5ZA is organized as 1 kb x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP 1.1V...
2668
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2kx8 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 1.1/2.5V Process
The ATO0002KX8TS040ULP5ZH is organized as 2 kb x 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP 1.1V...
2669
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2kx8 Bits OTP (One-Time Programmable) IP, VI- 0.18µm standard CMOS mixed-signal process
The AT2K8V180MM0AA is organized as a 2Kx8 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in VIS 0.18µm stand...
2670
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4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V BCD Process
The AT4K8V150BCD0AA is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15um BCD process. ...
2671
0.0
4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/5V BCD GIII Process
The ATO0004KX8VI150BG33NA is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm BCD G...
2672
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4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/5V BCD GIII Process
The ATO0004KX8VI150BG33NB is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm BCD GII...
2673
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4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/5V BCD GIII Process
The AT4K8V150BCD0AB is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm BCD GIII proc...
2674
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4Kx8 Bits OTP (One-Time Programmable) IP, VI- 0.15µm 1.8V/6V SOI BCD EPI Process
The ATO0004KX8VI150SOI3XX00A is organized as a 4K-bits by 8 one-time programmable. This is a kind of non-volatile memory fabricated in VI- 0.15µm SO...
2675
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8Kx8 Bits OTP (One-Time Programmable) IP, X-FA- 0.18μm XH018 Modular Mixed Signal Process
The ATO0008KX8XH180TG34DA is organized as an 8K-bits by 8 one-time programmable memory. This is a kind of non-volatile memory fabricated in X-FA- 0....
2676
0.0
8kx8 Bits OTP (One-Time Programmable) IP, X-FA- 0.18μm XH018 Modular Mixed Signal Process
The ATO0008KX8XF180HMH4DA is organized as a 8k-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in X-FA- 0.18μm ...
2677
0.0
4Kx9 Bits OTP (One-Time Programmable) IP, Globa-Foundr--- 12LP+ 0.8V/1.8V Process
The ATO0004KX9GF012LPP8ZA is organized as 4K-bits by 9 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Globa-Foundr--...
2678
0.0
CLICK - The universal solution of power gating for the whole SoC
CLICK is a power gating solution which create a ring of switches in order to ease�the integration of hard macro and provide automatic control of in-ru...
2679
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CLICK - The universal solution of power gating for the whole SoC
TSMC 180 eLL, CLICK, power gating cells to create a ring of switches in order to ease the integration of hard macro and provide automatic control of i...
2680
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CLICK - The universal solution of power gating for the whole SoC
TSMC 55 LP, CLICK, power gating cells to create a ring of switches in order to ease the integration of hard macro and provide automatic control of in-...
2681
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CLICK - The universal solution of power gating for the whole SoC
TSMC 55 LP, CLICK, power gating cells to create a ring of switches in order to ease the integration of hard macro and provide automatic control of in-...
2682
0.0
CLICK - The universal solution of power gating for the whole SoC
TSMC 55nm uLPeF, CLICK, power gating cells to create a ring of switches in order to ease the integration of hard macro and provide automatic control o...
2683
0.0
Floating point adder
Floating point adder...
2684
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Floating point MAC
Floating point MAC...
2685
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Floating point multiplier
Floating point multiplier...
2686
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In-memory computing
CompuRAM™ provides In Memory Computing (IMC) that will enable solutions for computing at the Edge to be more power efficient. At present, sensor data ...
2687
0.0
ONFI IO Pad Set
The ONFI library provides the combo driver / receiver cells, the ODT / driver impedance calibration cell, and the voltage reference cell to support bo...
2688
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ONFI4.0 NAND Flash IO in SMIC 40NLL, upto 800Mbps
Brite ONFI IO is applied for NAND flash memory interface. Brite ONFI IO libraries are compliant to ONFI 5.0/4.2/4.0/3.2 standards with ODT (On-Die Ter...
2689
0.0
Integrated ESD cell designs for General I/O, eMMC I/Os, SDIOs, and ONFI I/O(12nm~180nm)
M31’s I/O Libraries now include integrated ESD cell designs for General I/O, eMMC I/Os, SDIOs, and ONFI I/O. We provide standard JEDEC ESD level and c...
2690
0.0
LogicEE® Embedded EEPROM in CSMC 180nm~110nm
LogicEE® EEPROM IP是替代外部EEPROM的IP解决方案，可在逻辑工艺上实现，而无需增加额外的光罩层次。最大支持2K字节（Byte）存储容量，并可实现位操作，同时提供高达10万次的写入及擦除次数。...
2691
0.0
LogicEE® Embedded EEPROM in SMIC 180nm~55nm
LogicEE® EEPROM IP是替代外部EEPROM的IP解决方案，可在逻辑工艺上实现，而无需增加额外的光罩层次。最大支持2K字节（Byte）存储容量，并可实现位操作，同时提供高达10万次的写入及擦除次数。...
2692
0.0
LogicFlash Pro® Embedded Flash memory IP
LogicFlash Pro® eFlash是拥有自主知识产权的嵌入式闪存技术，可实现高性能、高可靠性的大容量存储。 产品开发验证中。...
2693
0.0
LogicFlash® Embedded MTP in CSMC 180nm~110nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
2694
0.0
LogicFlash® Embedded MTP in GlobalFoundries 180nm~110nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
2695
0.0
LogicFlash® Embedded MTP in HHGrace 180nm~55nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
2696
0.0
LogicFlash® Embedded MTP in Nexchip 150nm~55nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
2697
0.0
LogicFlash® Embedded MTP in Silterra 180nm~110nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
2698
0.0
LogicFlash® Embedded MTP in SMIC 180nm~55nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
2699
0.0
LogicFlash® Embedded MTP in Tower 180nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...
2700
0.0
LogicFlash® Embedded MTP in TSMC 180nm~130nm
LogicFlash® MTP是一种基于CMOS工艺的嵌入式非挥发性存储器技术，基于逻辑工艺实现，无需增加额外光罩层次，或通过增加1层额外光罩，缩减IP面积，适合于1KB~64KB的中等容量应用，同时提供高达2万次的擦写次数。 LogicFlash®技术可以在0.18um到55nm的Logic/BC...